2SB1678 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SB1678
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• Large Peak collector current I_CP
• Mini power type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
−30
V
Collector to emitter voltage
V_CEO
−20
V
Emitter to base voltage
V_EBO
−7
V
Peak collector current
I_CP
−5
A
Collector current
I_C
−3
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) _*: Printed circuit board copper foil for collector portion
area: 1.0 Cm² or more, thickness: 1.7 mm
Absolute maximum rating P_C Without heat sink shall be 0.5 W
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
3
0.4±0.08
1.5±0.1
21
0.5±0.08
3˚
3.0±0.15
0.4±0.04
45˚
1: Emitter
2: Collector
3: Base
MiniP3 Type Package
Marking Symbol: 2K
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^{*1, 2}
Collector to emitter saturation voltage ^*1
Collector output capacitance
Transition frequency
I_CBO
I_EBO
V_CEO
V_EBO
h_FE
V_CE(sat)
C_ob
f_T
V_CB = −10 V, I_E = 0
V_EB = −5 V, I_C = 0
I_C = −1 mA, I_B = 0
−20
I_E = −10 µA, I_C = 0
−7
V_CE = −2 V, I_C = 200 mA
90
I_C = −3 A, I_B = − 0.1 A
V_CB = −20 V, I_E = 0, f = 1 MHz
V_CB = −6 V, I_E = 50 mA, f = 200 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
h_FE
90 to 135 120 to 205 180 to 625
Typ Max
−100
−100
625
−1
85
120
Unit
nA
nA
V
V
V
pF
MHz
1