2SB1653 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type(For power switching)

Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
s ^Features
q High collector to emitter V_CEO
q Low collector to emitter saturation voltage V_CE(sat)
q Allowing automatic insertion with radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–400
V
Collector to emitter voltage V_CEO
–400
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
0.4±0.1
2.05±0.2
123
1:Emitter
2:Collector
3:Base
MT3 Type Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CB = –400V, I_E = 0
V_CE = –100V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_B = 0
V_CE = –5V, I_C = –50mA
V_CE = –5V, I_C = –300mA
I_C = –100mA, I_B = –10mA
V_CE = –100mA, I_B = –10mA
V_CB = –10V, I_E = 0.2A, f = 1MHz
V_CB = –10V, I_E = 0, f = 1MHz
I_C = –100mA,
I_B1 = –10mA, I_B2 = 10mA,
V_CC = –150V, R_L = 1.5kΩ
min
–400
80
10
typ
– 0.25
– 0.8
20
25
1.0
0.8
1.0
max
–1
–1
–1
280
– 0.5
–1.2
50
Unit
µA
µA
mA
V
V
V
MHz
pF
µs
µs
µs
*_{hFE1 Rank classification}
Rank
P
Q
h_FE1
80 to 160 130 to 280
1