2SB1645 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
I Features
• Satisfactory forward current transfer ratio h_FE characteristics
• Wide area of safe operation (ASO)
• Optimum for the output stage of a HiFi audio amplifier
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
−160
V
Collector to emitter voltage
V_CEO
−160
V
Emitter to base voltage
V_EBO
−5
V
Peak collector current
I_CP
−15
A
Collector current
I_C
−8
A
Collector power ^TC ^{= 25°C}
P_C
100
W
dissipation
T_a = 25°C
3
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Unit: mm
15.5±0.5 _{φ 3.2±0.1}
5°
3.0±0.3
5°
5°
(4.0)
5°
2.0±0.2
5°
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5°
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
C
B
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2 ^*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = −160 V, I_E = 0
V_CB = −160 V, I_E = 0
V_EB = −5 V, I_C = 0
I_C = −10 mA, I_B = 0
V_CE = −5 V, I_C = −1 A
V_CE = −5 V, I_C = −7 A
I_C = −7 A, I_B = −7 mA
I_C = −7 A, I_B = −7 mA
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = 7 A, I_B1 = −7 mA, I_B2 = 7 mA
V_CC = −50 V
Note) _*: Rank classification
Rank
P
Q
h_FE2
5 000 to 15 000 3 500 to 10 000
Min
−160
500
3 500
E
Typ Max
−100
−100
−100
15 000
−3
−3
20
1.0
1.5
1.2
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1