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2SB1643 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1643
Silicon PNP epitaxial planar type
For power amplification
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q High collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â60
V
Collector to emitter voltage VCEO
â60
V
Emitter to base voltage
VEBO
â6
V
Peak collector current
ICP
â6
A
Collector current
IC
â3
A
Base current
IB
â1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
1.3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = â60V, IE = 0
VEB = â40V, IC = 0
VEB = â6V, IC = 0
IC = â25mA, IB = 0
VCE = â4V, IC = â 0.5A
IC = â2A, IB = â 0.05A
VCE = â12V, IC = â 0.2A, f = 10MHz
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
â100 µA
â100 µA
â100 µA
â60
V
300
700
â1
V
30
MHz
*hFE Rank classification
Rank
Q
hFE
300 to 500
P
400 to 700
1
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