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2SB1631 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â60
V
Collector to emitter voltage VCEO
â60
V
Emitter to base voltage
VEBO
â6
V
Peak collector current
ICP
â6
A
Collector current
IC
â3
A
Base current
IB
â1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
ICBO
VCB = â60V, IE = 0
ICEO
VEB = â40V, IC = 0
IEBO
VEB = â6V, IC = 0
â100 µA
â100 µA
â100 µA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE*
IC = â25mA, IB = 0
VCE = â4V, IC = â 0.5A
â60
V
300
700
Collector to emitter saturation voltage VCE(sat)
IC = â2A, IB = â 0.05A
â1
V
Transition frequency
fT
VCE = â12V, IC = â 0.2A, f = 10MHz
30
MHz
*hFE Rank classification
Rank
Q
hFE
300 to 500
P
400 to 700
1
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