2SB1629 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB1629
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–60
V
Emitter to base voltage
V_EBO
–6
V
Peak collector current
I_CP
–6
A
Collector current
I_C
–3
A
Base current
I_B
–1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = –60V, I_E = 0
I_CEO
V_EB = –40V, I_B = 0
I_EBO
V_EB = –6V, I_C = 0
–100 µA
–100 µA
–100 µA
Collector to emitter voltage
Forward current transfer ratio
V_CEO
h_FE*
I_C = –25mA, I_B = 0
V_CE = –4V, I_C = – 0.5A
–60
V
300
700
Collector to emitter saturation voltage V_CE(sat)
I_C = –2A, I_B = – 0.05A
–1
V
Transition frequency
f_T
V_CE = –12V, I_C = – 0.2A, f = 10MHz
30
MHz
*_{hFE Rank classification}
Rank
Q
h_FE
300 to 500
P
400 to 700
1