2SB1623A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification

Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
■ Features
• High forward current transfer ratio h_FE
• Satisfactory linearity of forward current transfer ratio h_FE
• Dielectric breakdown voltage of the package: > 5 kV
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−80
V
Collector-emitter voltage (Base open) V_CEO
−80
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power
T_C = 25°C P_C
40
W
dissipation
2.0
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
V_BE
I_CBO
I_CEO
I_EBO
h_FE1
h_FE2 ^*
V_CE(sat)1
V_CE(sat)2
f_T
t_on
t_stg
t_f
I_C = −30 mA, I_B = 0
V_CE = −3 V, I_C = −3 A
V_CB = −80 V, I_E = 0
V_CE = −40 V, I_B = 0
V_EB = −5 V, I_C = 0
V_CE = −3 V, I_C = − 0.5 A
V_CE = −3 V, I_C = −3 A
I_C = −3 A, I_B = −12 mA
I_C = −5 A, I_B = −20 mA
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = −3 A, I_B1 = −12 mA, I_B2 = 12 mA
V_CC = −50 V
−80
1 000
1 000
V
−2.5
V
−200 µA
−500 µA
−2
mA

10 000
−2
V
−4
20
MHz
0.3
µs
2.0
µs
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
Q
P
h_FE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: January 2003
SJD00301AED
1