2SB1623 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For power amplification)

Power Transistors
2SB1623
Silicon PNP epitaxial planer type
For power amplification
I Features
• High forward current transfer ratio h_FE
• Satisfactory linearity of forward current transfer ratio h_FE
• Dielectric breakdown voltage of the package: > 5 kV
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
−60
V
Collector to emitter voltage
V_CEO
−60
V
Emitter to base voltage
V_EBO
−5
V
Peak collector current
I_CP
−8
A
Collector current
I_C
−4
A
Collector power ^TC ^{= 25°C}
P_C
40
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Package
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage (DC value)
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2 ^*
V_BE
V_CE(sat)1
V_CE(sat)2
f_T
t_on
t_stg
t_f
V_CB = −60 V, V_BE = 0
V_CB = −30 V, I_B = 0
V_EB = −5 V, I_C = 0
I_C = −30 mA, I_B = 0
V_CE = −3 V, I_C = − 0.5 A
V_CE = −3 V, I_C = −3 A
V_CE = −3 V, I_C = −3 A
I_C = −3 A, I_B = −12 mA
I_C = −5 A, I_B = −20 mA
V_CB = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = −3 A, I_B1 = −12 mA, I_B2 = 12 mA
V_CC = −50 V
Note) *: Rank classification
Rank
P
Q
R
h_FE2
4 000 to 10 000 2 000 to 5 000 1 000 to 2 500
Min
−60
1 000
1 000
Typ Max
−200
−500
−2
10 000
−2.5
−2
−4
20
0.3
2
0.5
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1