2SB1612 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–10
V
Collector to emitter voltage V_CEO
–10
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–2.4
A
Collector current
I_C
–2
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
Unit: mm
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ SC–62
Mini Power Type Package
Marking symbol : 2F
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = –7V, I_E = 0
I_C = –10µA, I_E = 0
–1
µA
–10
V
Collector to emitter voltage
V_CEO
I_C = –1mA, I_B = 0
–10
V
Emitter to base voltage
V_EBO
I_E = –10µA, I_C = 0
–7
V
Forward current transfer ratio
h_FE
V_CE = –2V, I_C = 200mA
200
800
Collector to emitter saturation voltage V_CE(sat)
I_C = –1A, I_B = –10mA
– 0.19 – 0.25 V
Transition frequency
f_T
V_CB = –6V, I_E = 50mA, f = 200MHz
60
MHz
Collector output capacitance
C_ob
V_CB = –6V, I_E = 0, f = 1MHz
100
pF
1