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2SB1607 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching) | |||
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Power Transistors
2SB1607
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD2469
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â130
V
Collector to emitter voltage VCEO
â80
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â15
A
Collector current
IC
â7
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
9.9±0.3
Ï3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TOâ220E Full Pack Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
ICBO
VCB = â100V, IE = 0
IEBO
VEB = â5V, IC = 0
â10
µA
â50
µA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
hFE2*
IC = â10mA, IB = 0
VCE = â2V, IC = â 0.1A
VCE = â2V, IC = â3A
â80
V
45
90
260
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = â5A, IB = â 0.25A
IC = â5A, IB = â 0.25A
â 0.5
V
â1.5
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
VCE = â10V, IC = â 0.5A, f = 10MHz
30
ton
0.5
tstg
IC = â3A, IB1 = â 0.3A, IB2 = 0.3A
1.5
tf
0.1
MHz
µs
µs
µs
*hFE2 Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
1
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