2SB1606 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching)

Power Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–130
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–10
A
Collector current
I_C
–5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = –100V, I_E = 0
I_EBO
V_EB = –5V, I_C = 0
–10
µA
–50
µA
Collector to emitter voltage
Forward current transfer ratio
V_CEO
h_FE1
h_FE2*
I_C = –10mA, I_B = 0
V_CE = –2V, I_C = – 0.1A
V_CE = –2V, I_C = –2A
–80
V
45
90
260
Collector to emitter saturation voltage V_CE(sat)
Base to emitter saturation voltage V_BE(sat)
I_C = –4A, I_B = – 0.2A
I_C = –4A, I_B = – 0.2A
– 0.5
V
–1.5
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CE = –10V, I_C = – 0.5A, f = 10MHz
30
t_on
0.13
t_stg
I_C = –2A, I_B1 = – 0.2A, I_B2 = 0.2A
0.5
t_f
0.13
MHz
µs
µs
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1