2SB1605 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-freauency power amplification)

Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1605
–60
base voltage 2SB1605A
V_CBO
–80
V
Collector to 2SB1605
–60
emitter voltage 2SB1605A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–5
A
Collector current
I_C
–3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB1605
current
2SB1605A
Collector cutoff
2SB1605
current
2SB1605A
Emitter cutoff current
Collector to emitter 2SB1605
voltage
2SB1605A
I_CES
I_CEO
I_EBO
V_CEO
V_CE = –60V, V_BE = 0
V_CE = –80V, V_BE = 0
V_CE = –30V, I_B = 0
V_CE = –60V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
–200
µA
–200
–300
µA
–300
–1
mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = –4V, I_C = –1A
70
V_CE = –4V, I_C = –3A
10
V_CE = –4V, I_C = –3A
I_C = –3A, I_B = – 0.375A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
I_C = –1A, I_B1 = – 0.1A, I_B2 = 0.1A
250
–1.8
V
–1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
1