2SB1603 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-voltage switching)

Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1603
–40
base voltage 2SB1603A
V_CBO
–50
V
Collector to 2SB1603
–20
emitter voltage 2SB1603A
V_CEO
–40
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–8
A
Collector current
I_C
–4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SB1603
voltage
2SB1603A
Symbol
I_CBO
I_EBO
V_CEO
Conditions
V_CB = –40V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –10mA, I_B = 0
min
typ
max Unit
–50
µA
–50
µA
–20
V
–40
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CE = –2V, I_C = – 0.1A
45
V_CE = –2V, I_C = –1A
90
260
I_C = –2A, I_B = – 0.1A
– 0.5
V
I_C = –2A, I_B = – 0.1A
–1.5
V
V_CE = –5V, I_C = – 0.5A, f = 10MHz
150
MHz
0.3
µs
I_C = –2A, I_B1 = – 0.2A, I_B2 = 0.2A
0.4
µs
0.1
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1