2SB1599 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For power amplification)

Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification
Complementary to 2SD2457
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–40
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–3
A
Base current
I_B
– 0.6
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1X
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
I_EBO
V_CBO
V_CEO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
V_CE = –12V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_E = 0
I_C = –10mA, I_B = 0
V_CE = –5V, I_C = –1A
I_C = –1.5A, I_B = –0.15A
I_C = –2A, I_B = –0.2A
V_CB = –5V, I_E = 0.5A, f = 200MHz
V_CB = –5V, I_E = 0, f = 1MHz
min
typ
max Unit
–1
µA
–100 µA
–100 µA
–50
V
–40
V
50
220
– 0.4 –1
V
–1.5
V
150
MHz
70
pF
*_{hFE Rank classification}
Rank
P
h_FE
50 ~ 100
Q
80 ~ 160
R
100 ~ 220
1