2SB1593 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Low-Frequency Output Amplification

Power Transistors
2SB1593
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−29
V
Collector-emitter voltage
V_CER
−29
V
(Resistor between B and E)
Collector-emitter voltage (Base open) V_CEO
−20
V
Emitter-base voltage (Collector open) V_EBO
−11
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−10
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 ∼ +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emiter open) V_CBO I_C = −10 µA, I_E = 0
−29
Collector-emitter voltage
V_CER I_C = −1 mA, R_BE = 10 kΩ
−29
(Resistor between B and E)
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CEO I_C = −1 mA, I_B = 0
−20
V_EBO I_E = −10 µA, I_C = 0
−11
h_FE V_CE = −2 V, I_C = −2.6 A
100
V_CE(sat) I_C = −2.6 A, I_B = −40 mA
f_T
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.3
200
110
450
− 0.5
150
Unit
V
V
V
V

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJD00085BED
1