2SB1592 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB1592
Silicon PNP epitaxial planer type
For low-frequency amplification
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–25
V
Emitter to base voltage
V_EBO
–11
V
Peak collector current
I_CP*
–10
A
Collector current
I_C
–3
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Applied are shot pulse of ≤1ms width}
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = –10µA, I_E = 0
–30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
V_CEO
V_EBO
h_FE*1
V_CE(sat)
f_T
I_C = –1mA, I_B = 0
–25
V
I_E = –10µA, I_C = 0
–11
V
V_CE = –2V, I_C = –1.4A^*2
90
450
I_C = –1.4A, I_B = –25mA^*2
– 0.16 – 0.22 V
V_CB = –6V, I_E = 50mA, f = 200MHz
150
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
85
pF
*2 _{Pulse measurement}
*1_{hFE Rank classification}
Rank
Q
R
h_FE
90 ~ 180 130 ~ 450
1