2SB1574 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency output amplification)

Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
For low-frequency output amplification
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s ^Features
q Possible to solder radiation fin directly to printed cicuit boad
q Type with universal characteristics
q Collector breakdown voltage: V_CBO/V_CEO = –50V
q Collector current: I_C = –2A
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–3
A
Collector current
I_C
–2
A
Collector power dissipation (T_C=25°C)
P_C
10
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = –10V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –2V, I_C = –200mA
V_CE = –2V, I_C = –1A
I_C = –1A, I_B = –50mA
I_C = –1A, I_B = –50mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
0.75
2.3 2.3
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
min
typ
max Unit
– 0.1 µA
–50
V
–50
V
–5
V
120
340
60
– 0.2 – 0.3
V
– 0.85 –1.2
V
80
MHz
45
60
pF
*_{hFE1 Rank classification}
Rank
R
S
h_FE1
120 to 240 170 to 340
1