2SB1554 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Allowing automatic insertion with radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–60
V
Emitter to base voltage
V_EBO
–20
V
Peak collector current
I_CP
–8
A
Collector current
I_C
–4
A
Base current
I_B
–2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = –60V, I_E = 0
–10
µA
V_CE = –50V, I_B = 0
–50
µA
V_EB = –15V, I_C = 0
–10
µA
I_C = –10mA, I_B = 0
–60
V
V_CE = –4V, I_C = – 0.8A
80
400
V_CE = –4V, I_C = –2A
30
I_C = –2A, I_B = –100mA
–1.0
V
I_C = –2A, I_B = –100mA
–1.5
V
V_CE = –10V, I_C = – 0.5A, f = 1MHz
25
MHz
I_C = –2A,
0.4
µs
I_B1 = –100mA, I_B2 = 100mA,
0.6
µs
V_CC = –50V
0.25
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
80 to 160 120 to 240
O
200 to 400
1