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2SB1553 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â60
V
Collector to emitter voltage VCEO
â60
V
Emitter to base voltage
VEBO
â6
V
Peak collector current
ICP
â6
A
Collector current
IC
â3
A
Base current
IB
â1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = â60V, IE = 0
VCE = â40V, IB = 0
VEB = â6V, IC = 0
IC = â25mA, IB = 0
â60
VCE = â4V, IC = â 0.5A
300
IC = â2A, IB = â 0.05A
VCE = â12V, IC = â 0.2A, f = 10MHz
â100 µA
â100 µA
â100 µA
V
700
â1
V
30
MHz
*hFE Rank classification
Rank
Q
hFE
300 to 500
P
400 to 700
1
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