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2SB1548 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1548
â60
VCBO
V
base voltage 2SB1548A
â80
Collector to 2SB1548
â60
VCEO
V
emitter voltage 2SB1548A
â80
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â5
A
Collector current
IC
â3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
25
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
Unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
Ï3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TOâ220D Full Pack Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
Collector cutoff
current
2SB1548
ICES
2SB1548A
VCE = â60V, VBE = 0
VCE = â80V, VBE = 0
Collector cutoff
current
2SB1548
ICEO
2SB1548A
VCE = â30V, IB = 0
VCE = â60V, IB = 0
Emitter cutoff current
IEBO
VEB = â5V, IC = 0
Collector to emitter 2SB1548
â60
VCEO
IC = â30mA, IB = 0
voltage
2SB1548A
â80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = â4V, IC = â1A
70
VCE = â4V, IC = â3A
10
VCE = â4V, IC = â3A
IC = â3A, IB = â 0.375A
VCE = â10V, IC = â 0.5A, f = 10MHz
30
0.5
IC = â1A, IB1 = â 0.1A, IB2 = 0.1A
1.2
0.3
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
max Unit
â200
µA
â200
â300
µA
â300
â1
mA
V
250
â1.8
V
â1.2
V
MHz
µs
µs
µs
1
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