2SB1539 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB1539
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2359
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Large collector power dissipation P_C.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–20
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1.2
A
Collector current
I_C
–1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1N
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = –14V, I_E = 0
Collector to base voltage
V_CBO
I_C = –10µA, I_E = 0
–20
Collector to emitter voltage
V_CEO
I_C = –1mA, I_B = 0
–20
Emitter to base voltage
V_EBO
I_E = –10µA, I_C = 0
–5
Forward current transfer ratio
h_FE
V_CE = –2V, I_C = –100mA^**
200
Collector to emitter saturation voltage V_CE(sat)
I_C = –500mA, I_B = –10mA^**
–1
µA
V
V
V
800
– 0.2
V
Transition frequency
f_T
V_CB = –10V, I_E = 50mA, f = 200MHz
120
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
30
pF
** _{Pulse measurement}
1