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2SB1537 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer typeFor low-frequency amplification) | |||
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Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2357
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â10
V
Collector to emitter voltage VCEO
â10
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â1.2
A
Collector current
IC
â1
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SCâ62
Mini Power Type Package
Marking symbol : 1L
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
VCB = â7V, IE = 0
IC = â10µA, IE = 0
â10
IC = â1mA, IB = 0
â10
IE = â10µA, IC = 0
â5
VCE = â2V, IC = â100mA**
200
IC = â500mA, IB = â5mA**
VCB = â5V, IE = 50mA, f = 200MHz
VCB = â5V, IE = 0, f = 1MHz
typ max Unit
â1
µA
V
V
V
800
â 0.15 V
120
MHz
45
pF
** Pulse measurement
1
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