2SB1504 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type darlington

Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
For power switching
7.5±0.2
Unit: mm
4.5±0.2
• High forward current transfer ratio h_FE
• High-speed switching
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−8
A
Peak collector current
I_CP
−12
A
Collector power dissipation
Junction temperature
Storage temperature
P_C
1.5
W
T_j
150
°C
T_stg −55 to +150 °C
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_EBO
h_FE1 ^*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
I_C = −30 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_EB = −7 V, I_C = 0
V_CE = −3 V, I_C = −4 A
V_CE = −3 V, I_C = −8 A
I_C = −4 A, I_B = −8 mA
I_C = −4 A, I_B = −8 mA
V_CB = −10 V, I_E = 0.5 A, f = 200 MHz
I_C = −4 A, I_B1 = −8 mA, I_B2 = 8 mA
V_CC = −50 V
−50
1 000
500
V
−100 µA
−2
mA
10 000 
−1.5
V
−2.0
V
20
MHz
0.5
µs
2.0
µs
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
P
Q
R
h_FE1
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: April 2003
SJD00080BED
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