2SB1488 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planer type(For power switching)

Transistor
2SB1488
Silicon PNP triple diffusion planer type
For power switching
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s ^Features
q High foward current transfer ratio h_FE.
q High-speed switching.
q High collector to base voltage V_CBO.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
0.65 max.
0.45^{+–00..015}
2.5±0.5 2.5±0.5
1
2
3
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–400
V
Collector to emitter voltage V_CEO
–400
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
C_ob
*1_{hFE1 Rank classification}
Rank
P
Q
h_FE1
80 ~ 160 130 ~ 280
Conditions
V_CB = –400V, I_E = 0
V_CE = –100V, I_B = 0
V_BE = –5V, I_C = 0
I_C = –1mA, I_B = 0
V_CE = –5V, I_C = –50mA
V_CE = –5V, I_C = –300mA^*2
I_C = –100mA, I_B = –10mA^*2
I_C = –100mA, I_B = –10mA^*2
V_CB = –10V, I_E = 0.1A, f = 1MHz^*2
I_C = –100mA, R_L = 1.5kΩ
I_B1 = –10mA, I_B2 = 10mA
V_CC = –150V
V_CB = –10V, I_E = 0, f = 1MHz
min
–400
80
10
typ max Unit
–1
µA
–1
µA
–1
µA
V
280
– 0.25 – 0.5
V
– 0.8 –1.2
V
25
MHz
0.4
1.0
µs
5.5
6.5
µs
0.5
1.0
µs
20
40
pF
*2 _{Pulse measurement}
1