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2SB1470 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Power Amplification
Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
For power amplification
Complementary to 2SD2222
20.0±0.5
φ 3.3±0.2
Unit: mm
5.0±0.3
(3.0)
■ Features
• Optimum for 120 W HiFi output
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−160
V
Collector-emitter voltage (Base open) VCEO
−160
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−8
A
Peak collector current
ICP
−15
A
Collector power dissipation
PC
150
W
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCB = −160 V, IE = 0
VCE = −160 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −7 A
IC = −7 A, IB = −7 mA
IC = −7 A, IB = −7 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −7 A, IB1 = −7 mA, IB2 = 7 mA
VCC = −50 V
−160
1 000
3 500
V
−100 µA
−100 µA
−100 µA

20 000
−3
V
−3
V
20
MHz
1.0
µs
1.5
µs
1.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2
3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
Publication date: March 2003
SJD00076BED
1
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