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2SB1463 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | |||
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Transistor
2SB1463
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD2240
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â150
V
Collector to emitter voltage VCEO
â150
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â100
mA
Collector current
IC
â50
mA
Collector power dissipation PC
125
mW
Junction temperature
Tj
125
ËC
Storage temperature
Tstg
â55 ~ +125
ËC
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SCâ75
SSâMini Type Package
Marking symbol : I
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = â100V, IE = 0
IC = â100µA, IB = 0
â150
IE = â10µA, IC = 0
â5
VCE = â5V, IC = â10mA
130
IC = â30mA, IB = â3mA
VCB = â10V, IE = 10mA, f = 200MHz
200
â1
µA
V
V
450
â1
V
MHz
Collector output capacitance
Cob
VCB = â10V, IE = 0, f = 1MHz
4
pF
Noise voltage
VCE = â10V, IC = â1mA, GV = 80dB,
NV
150
mV
Rg = 100kâ¦, Function = FLAT
*hFE Rank classification
Rank
hFE
Marking Symbol
R
130 ~ 220
IR
S
185 ~ 330
IS
T
260 ~ 450
IT
1
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