2SB1462L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – For General Amplification

Transistors
2SB1462L
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216L
■ Features
• High forward current transfer ratio h_FE
• Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation ^*
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Note) *: Print circuit board: Copper foil area of 20.0 mm² or more, and the
board thickness of 1.6 mm for the collector portion
3
2
4
1
1.00±0.05
Unit: mm
0.020±0.010
0.60±0.05
0.30±0.03
4
1
3
Marking Symbol: J
0.60
2
0.05±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emiter open) V_CBO I_C = −10 µA, I_E = 0
−60
Collector-emitter voltage (Base open) V_CEO I_C = −100 µA, I_B = 0
−50
Emiter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −2mA
180
Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.3
80
2.7
− 0.1
−100
390
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJC00088BED
1