2SB1462J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For general amplification

Transistors
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
• High forward current transfer ratio h_FE
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
Marking Symbol: A
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
I_C = −10 µA, I_E = 0
I_C = −100 µA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −20 V, I_E = 0
V_CE = −10 V, I_E = 0
V_CE = −10 V, I_C = −2 mA
I_C = −100 mA, I_B = −10 mA
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ Max
−60
−50
−7
− 0.1
−100
180
390
− 0.3 − 0.5
80
2.7
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJC00087BED
1