2SB1440 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor
2SB1440
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2185
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–3
A
Collector current
I_C
–2
A
Collector power dissipation P_C
1^*
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1I
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
min
I_C = –10µA, I_E = 0
–50
I_C = –1mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–5
V_CE = –2V, I_C = –200mA
120
V_CE = –2V, I_C = –1A
60
I_C = –1A, I_B = –50mA
I_C = –1A, I_B = –50mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
typ max
340
– 0.2
– 0.85
80
45
– 0.3
–1.2
60
Unit
V
V
V
V
V
MHz
pF
*_{hFE1 Rank classification}
Rank
R
S
h_FE1
120 ~ 240 170 ~ 340
1