2SB1435 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Large collector current I_C
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−3
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) V_CBO I_C = −10 µA, I_E = 0
−50
Collector-emitter voltage (Base open) V_CEO I_C = −1 mA, I_B = 0
−50
Emiter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−5
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
− 0.1
Forward current transfer ratio
h_FE1 ^* V_CE = −2 V, I_C = −200 mA
120
340
h_FE2 V_CE = −2 V, I_C = −1 A
60
Collector-emitter saturation voltage
V_CE(sat) I_C = −1 A, I_B = −50 mA
− 0.2 − 0.3
Base-emitter saturation voltage
V_BE(sat) I_C = −1 A, I_B = −50 mA
− 0.85 −1.20
Transition frequency
f_T
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
80
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
45 60
V
V
V
µA

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
h_FE1
120 to 240 170 to 340
Publication date: March 2003
SJD00074BED
1