2SB1418 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Unit: mm
Complementary to 2SD2138 and 2SD2138A
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Allowing automatic insertion with radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
C1.0
2.25±0.2
Parameter
Symbol
Ratings
Unit
Collector to 2SB1418
–60
base voltage 2SB1418A
V_CBO
–80
V
Collector to 2SB1418
–60
emitter voltage 2SB1418A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–4
A
Collector current
I_C
–2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
0.55±0.1
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB1418
current
2SB1418A
Collector cutoff
2SB1418
current
2SB1418A
Emitter cutoff current
Collector to emitter 2SB1418
voltage
2SB1418A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = –60V, I_B = 0
V_CB = –80V, I_B = 0
V_CE = –30V, I_B = 0
V_CE = –40V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
–100
µA
–100
–100
µA
–100
–100 µA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
h_FE1
h_FE2*
V_BE
V_CE(sat)
f_T
t_on
t_off
V_CE = –4V, I_C = –1A
V_CE = –4V, I_C = –2A
V_CE = –4V, I_C = –2A
I_C = –2A, I_B = –8mA
V_CE = –10V, I_C = – 0.5A, f = 1MHz
I_C = –2A, I_B1 = –8mA, I_B2 = 8mA,
V_CC = –50V
1000
2000
10000
–2.8
V
–2.5
V
20
MHz
0.2
µs
2
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
1