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2SB1417 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1417
â60
VCBO
V
base voltage 2SB1417A
â80
Collector to 2SB1417
â60
VCEO
V
emitter voltage 2SB1417A
â80
Emitter to base voltage
VEBO
â6
V
Peak collector current
ICP
â5
A
Collector current
IC
â3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
2.0
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
Unit: mm
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB1417
current
2SB1417A
Collector cutoff
2SB1417
current
2SB1417A
Emitter cutoff current
Collector to emitter 2SB1417
voltage
2SB1417A
ICES
ICEO
IEBO
VCEO
VCE = â60V, VBE = 0
VCE = â80V, VBE = 0
VCE = â30V, IB = 0
VCE = â60V, IB = 0
VEB = â6V, IC = 0
IC = â30mA, IB = 0
â100
µA
â100
â100
µA
â100
â100 µA
â60
V
â80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = â4V, IC = â1A
70
VCE = â4V, IC = â3A
10
VCE = â4V, IC = â3A
IC = â3A, IB = â 0.375A
VCE = â5V, IC = â 0.2A, f = 10MHz
IC = â1A, IB1 = â 0.1A, IB2 = 0.1A,
VCC = â50V
250
â1.8
V
â1.2
V
30
MHz
0.3
µs
1.0
µs
0.2
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
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