2SB1416 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
■ Features
• High forward current transfer ratio h_FE which has satisfactory
linearity
• Low collector-emitter saturation voltage V_CE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−60
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−5
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −30 mA, I_B = 0
−60
V
Base-emitter voltage
V_BE V_CE = −4 V, I_C = −3 A
−1.8
V
Collector-emitter cutoff current (E-B short) I_CES V_CE = −60 V, V_BE = 0
−200 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = −30 V, I_B = 0
−300 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
−1
mA
Forward current transfer ratio
h_FE1 ^* V_CE = −4 V, I_C = −1 A
40
250

h_FE2 V_CE = −4 V, I_C = −3 A
10
Collector-emitter saturation voltage
V_CE(sat) I_C = −3 A, I_B = − 0.375A
−1.2
V
Transition frequency
f_T
V_CB = −5 V, I_E = 0.1 A, f = 200 MHz
270
MHz
Turn-on time
t_on
I_C = −1 A, I_B1 = − 0.1 A, I_B2 = 0.1 A
0.5
µs
Storage time
t_stg
1.2
µs
Fall time
t_f
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
h_FE1
40 to 90
70 to 150 120 to 250
Publication date: March 2003
SJD00071BED
1