2SB1414 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SB1414
Silicon PNP epitaxial planar type
For low-frequency driver/high power amplification
Complementary to 2SD2134
■ Features
• Excellent current I_C characteristics of forward current transfer ratio
h_FE vs. collector
• High transition frequency f_T
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−150
V
Collector-emitter voltage (Base open) V_CEO
−150
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−1
A
Peak collector current
I_CP
−1.5
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio ^*1
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V_CEO
V_EBO
h_FE1 ^*2
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
I_C = −100 µA, I_B = 0
I_E = −10 µA, I_C = 0
V_CE = −10 V, I_C = −150 mA
V_CE = −5 V, I_C = −500 mA
I_C = −500 mA, I_B = −50 mA
I_C = −500 mA, I_B = −50 mA
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Min
−150
−5
90
50
Typ
− 0.5
−1.0
200
30
Max
330
−2.0
−2.0
Unit
V
V

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h_FE1
90 to 155 130 to 220 185 to 330
Publication date: February 2002
SJD00070BED
1