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2SB1398 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification) | |||
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Transistor
2SB1398
Silicon PNP epitaxial planer type
For low-frequency output amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â30
V
Collector to emitter voltage VCEO
â25
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â8
A
Collector current
IC
â5
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
+0.1
0.45â0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+â00..105
(HW type)
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
VCB = â10V, IE = 0
VEB = â5V, IC = 0
IC = â1mA, IB = 0
â25
IE = â10µA, IC = 0
â7
VCE = â2V, IC = â2A*2
90
IC = â3A, IB = â0.1A*2
VCB = â6V, IE = 50mA, f = 200MHz
VCB = â20V, IE = 0, f = 1MHz
typ max Unit
â100 nA
â100 nA
V
V
205
â1
V
120
MHz
85
pF
*2 Pulse measurement
*1hFE Rank classification
Rank
P
Q
hFE
90 ~ 135 120 ~ 205
1
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