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2SB1393 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
s Features
q Satisfactory linearity of foward current transfer ratio hFE
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1393
â60
VCBO
V
base voltage 2SB1393A
â80
Collector to 2SB1393
â60
emitter voltage 2SB1393A
VCEO
â80
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â5
A
Collector current
IC
â3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
25
W
2.0
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff
2SB1393
current
2SB1393A
Collector cutoff
2SB1393
current
2SB1393A
Emitter cutoff current
Collector to emitter 2SB1393
voltage
2SB1393A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICEO
ICES
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = â30V, IB = 0
VCE = â60V, IB = 0
VCE = â60V, VBE = 0
VCE = â80V, VBE = 0
VEB = â5V, IC = 0
IC = â30mA, IB = 0
VCE = â4V, IC = â1A
VCE = â4V, IC = â3A
VCE = â4V, IC = â3A
IC = â3A, IB = â 0.375A
VCE = â5V, IC = â 0.1A, f = 1MHz
IC = â1A, IB1 = â 0.1A, IB2 = 0.1A,
VCC = â50V
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
min
typ
max Unit
â300
µA
â300
â200
µA
â200
â1
mA
â60
V
â80
70
250
10
â1.8
V
â1.2
V
20
MHz
0.5
µs
1.2
µs
0.3
µs
1
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