2SB1378 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Optimum for low-voltage operation and for converters.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–25
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
0.45^{+–00..015}
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
*1_{hFE1 Rank classification}
V_CB = –25V, I_E = 0
–100 nA
V_CE = –20V, I_B = 0
–1
µA
I_C = –10µA, I_E = 0
–25
V
I_C = –1mA, I_B = 0
–20
V
I_E = –10µA, I_C = 0
–7
V
V_CE = –2V, I_C = –0.5A^*2
90
350
V_CE = –2V, I_C = –1A^*2
25
I_C = –500mA, I_B = –50mA^*2
– 0.4
V
I_C = –500mA, I_B = –50mA^*2
–1.2
V
V_CB = –10V, I_E = 50mA, f = 200MHz
150
MHz
V_CB = –10V, I_E = 0, f = 1MHz
15
25
pF
*2 _{Pulse measurement}
Rank
Q
R
S
h_FE1
90 ~ 155 130 ~ 220 180 ~ 350
1