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2SB1371 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type(For high power amplification) | |||
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Power Transistors
2SB1371
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2064
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â120
V
Collector to emitter voltage VCEO
â120
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â10
A
Collector current
IC
â6
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
70
W
3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = â120V, IE = 0
VEB = â3V, IC = 0
VCE = â5V, IC = â20mA
VCE = â5V, IC = â1A
VCE = â5V, IC = â4A
VCE = â5V, IC = â4A
IC = â4A, IB = â 0.4A
VCE = â5V, IC = â 0.5A, f = 1MHz
VCB = â10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2
60 to 120 80 to 160
P
100 to 200
Unit: mm
15.0±0.3
11.0±0.2
Ï3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOPâ3 Full Pack Package(a)
min
typ
max Unit
â50
µA
â50
µA
20
60
200
20
â1.8
V
â2.0
V
15
MHz
150
pF
1
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