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2SB1347 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type(For high power amplification) | |||
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Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2029
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â160
V
Collector to emitter voltage VCEO
â160
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â20
A
Collector current
IC
â12
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
120
W
3.5
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = â160V, IE = 0
VEB = â3V, IC = 0
VCE = â5V, IC = â20mA
VCE = â5V, IC = â1A
VCE = â5V, IC = â8A
VCE = â5V, IC = â8A
IC = â8A, IB = â 0.8A
VCE = â5V, IC = â 0.5A, f = 1MHz
VCB = â10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2
60 to 120 80 to 160
P
100 to 200
20.0±0.5
Unit: mm
Ï 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOPâ3L Package
min
typ
max Unit
â50
µA
â50
µA
20
60
200
20
â1.8
V
â2.0
V
15
MHz
400
pF
1
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