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2SB1322A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)
Transistors
2SB1322A
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1994A
I Features
• Allowing supply with the radial taping
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−50
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−1.5
A
Collector current
IC
−1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
+0.1
0.45−0.05
2.5±0.5 2.5±0.5
1
2
3
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+−00..105
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = −20 V, IE = 0
IC = −10 µA, IE = 0
−60
IC = −2 mA, IB = 0
−50
IE = −10 µA, IC = 0
−5
VCE = −10 V, IC = −500 mA
85
VCE = −5 V, IC = −1 A
50
IC = −500 mA, IB = −50 mA
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
Typ Max
− 0.1
340
− 0.4
−1.2
200
20 30
Unit
µA
V
V
V
V
V
MHz
pF
1