2SB1321A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SB1321A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1992A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
• Large collector power dissipation P_C (600 mW)
• Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings T_a = 25°C
0.45^{+−00..105}
2.5±0.5 2.5±0.5
1
2
3
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
−60
V
V_CEO
−50
V
V_EBO
−7
V
I_CP
−1
A
I_C
−500
mA
P_C
600
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+−00..105}
(HW Type)
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1 ^*2
h_FE2
V_CE(sat)
f_T
C_ob
V_CB = −20 V, I_E = 0
V_CE = −20 V, I_B = 0
I_C = −10 µA, I_E = 0
−60
I_C = −2 mA, I_B = 0
−50
I_E = −10 µA, I_C = 0
−7
V_CE = −10 V, I_C = −10 mA
85
V_CE = −10 V, I_C = −500 mA
40
I_C = −300 mA, I_B = −30 mA
V_CB = −10 V, I_E = 10 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
− 0.1
−1
340
− 0.35 − 0.6
200
6
15
µA
µA
V
V
V
V
MHz
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
h_FE1
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
1