2SB1320A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SB1320A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1991A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
• High forward current transfer ratio h_FE
• Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings T_a = 25°C
0.45^{+−00..105}
2.5±0.5 2.5±0.5
1
2
3
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
−60
V
V_CEO
−50
V
V_EBO
−7
V
I_CP
−200
mA
I_C
−100
mA
P_C
400
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45^{+−00..105}
(HW Type)
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
I_CBO
V_CB = −20 V, I_E = 0
−1
µA
I_CEO
V_CE = −20 V, I_B = 0
−1
µA
Collector to base voltage
V_CBO
I_C = −10 µA, I_E = 0
−60
V
Collector to emitter voltage
V_CEO
I_C = −2 mA, I_B = 0
−50
V
Emitter to base voltage
V_EBO
I_E = −10 µA, I_C = 0
−7
V
Forward current transfer ratio ^*
h_FE
V_CE = −10 V, I_C = −2 mA
160
460
Collector to emitter saturation voltage V_CE(sat) I_C = −100 mA, I_B = −10 mA
−1
V
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
3.5
pF
Note) *: Rank classification
Rank
Q
R
S
No-rank
h_FE
160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.
1