2SB1297 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor
2SB1297
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1937
s ^Features
q Extremely satisfactory linearity of the forward current transfer
ratio h_FE.
q High transition frequency f_T.
q Makes up a complementary pair with 2SD1937, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–120
V
Collector to emitter voltage V_CEO
–120
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
I_C = –0.1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA^*2
V_CE = –5V, I_C = –500mA^*2
I_C = –300mA, I_B = –30mA^*2
I_C = –300mA, I_B = –30mA^*2
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
90 ~ 155 130 ~ 220
min
–120
–5
90
50
typ max Unit
V
V
220
–1.0
V
–1.2
V
250
MHz
30
pF
*2 _{Pulse measurement}
1