2SB1288 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Large collector current I_C.
q Allowing supply with the radial taping.
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–10
A
Collector current
I_C
–5
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CEO
V_EBO
h_FE*1
V_CE(sat)
f_T
C_ob
V_CB = –10V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_B = 0
–20
I_E = –10µA, I_C = 0
–7
V_CE = –2V, I_C = –2A^*2
90
I_C = –3A, I_B = –0.1A^*2
V_CB = –6V, I_E = 50mA, f = 200MHz
V_CB = –20V, I_E = 0, f = 1MHz
*1_{hFE Rank classification}
Rank
P
Q
h_FE
90 ~ 135 120 ~ 205
R
180 ~ 625
typ max Unit
–100 nA
–100 nA
V
V
625
–1
V
120
MHz
85
pF
*2 _{Pulse measurement}
1