|
2SB1255 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification) | |||
|
Power Transistors
2SB1255
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1895
Unit: mm
s Features
q Optimum for 90W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < â2.5V
q Full-pack package which can be installed to the heat sink with
one screw
15.0±0.3
11.0±0.2
Ï3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
1.1±0.1
5.45±0.3
10.9±0.5
0.6±0.2
Collector to base voltage
VCBO
â160
V
Collector to emitter voltage VCEO
â140
V
Emitter to base voltage
VEBO
â8
V
Peak collector current
ICP
â12
A
Collector current
IC
â15
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
100
W
3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
123
1:Base
2:Collector
3:Emitter
TOPâ3 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = â160V, IE = 0
VCE = â140V, IB = 0
VEB = â5V, IC = 0
IC = â30mA, IB = 0
VCE = â5V, IC = â1A
VCE = â5V, IC = â7A
IC = â7A, IB = â7mA
IC = â7A, IB = â7mA
VCE = â10V, IC = â 0.5A, f = 1MHz
IC = â7A, IB1 = â7mA, IB2 = 7mA,
VCC = â50V
min
â140
2000
5000
typ max Unit
â100 µA
â100 µA
â100 µA
V
30000
â2.5
V
â3.0
V
20
MHz
1.0
µs
1.5
µs
1.2
µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
|
▷ |