2SB1253 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

Power Transistors
2SB1253
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1893
Unit: mm
s ^Features
q Optimum for 40W HiFi output
q High foward current transfer ratio h_FE: 5000 to 30000
q Low collector to emitter saturation voltage V_CE(sat): < –2.5V
q Full-pack package which can be installed to the heat sink with
one screw
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
1.1±0.1
5.45±0.3
10.9±0.5
0.6±0.2
Collector to base voltage
V_CBO
–130
V
Collector to emitter voltage V_CEO
–110
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–10
A
Collector current
I_C
–6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
50
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
Conditions
V_CB = –130V, I_E = 0
V_CE = –110V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
V_CE = –5V, I_C = –1A
V_CE = –5V, I_C = –5A
I_C = –5A, I_B = –5mA
I_C = –5A, I_B = –5mA
V_CE = –10V, I_C = – 0.5A, f = 1MHz
I_C = –5A, I_B1 = –5mA, I_B2 = 5mA,
V_CC = –50V
min
–110
2000
5000
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5
V
–3.0
V
20
MHz
0.9
µs
2.5
µs
1.7
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 5000 to 15000 8000 to 30000
1