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2SB1252 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification) | |||
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Power Transistors
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1892
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q Optimum for 35W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < 2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
VCBO
â120
V
Collector to emitter voltage VCEO
â100
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â8
A
Collector current
IC
â5
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
45
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = â120V, IE = 0
VCE = â100V, IB = 0
VEB = â5V, IC = 0
IC = â30mA, IB = 0
VCE = â5V, IC = â1A
VCE = â5V, IC = â4A
IC = â4A, IB = â4mA
IC = â4A, IB = â4mA
VCE = â10V, IC = â 0.5A, f = 1MHz
IC = â4A, IB1 = â4mA, IB2 = 4mA,
VCC = â50V
min
â100
2000
5000
typ max Unit
â100 µA
â100 µA
â100 µA
V
30000
â2.5
V
â3.0
V
20
MHz
1.0
µs
0.8
µs
1.0
µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
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