2SB1221 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–250
V
Collector to emitter voltage V_CEO
–200
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–70
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
V_CEO
V_EBO
h_FE*
V_CB = –12V, I_E = 0
I_C = –100µA, I_B = 0
I_E = –1µA, I_C = 0
V_CE = –10V, I_C = –5mA
–200
–5
60
–2
µA
V
V
220
Collector to emitter saturation voltage V_CE(sat)
I_C = –50mA, I_B = –5mA
–1.5
V
Transition frequency
f_T
Collector output capacitance
C_ob
V_CB = –10V, I_E = 10mA, f = 200MHz
50
80
MHz
V_CB = –10V, I_E = 0, f = 1MHz
5
10
pF
*_{hFE Rank classification}
Rank
Q
h_FE
60 ~ 150
R
100 ~ 220
1