2SB1220 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Transistor
2SB1220
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–150
V
Collector to emitter voltage V_CEO
–150
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S-Mini Type Package
Marking symbol : I
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
V_CEO
V_EBO
h_FE*
V_CB = –100V, I_E = 0
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –5V, I_C = –10mA
–150
–5
130
–1
µA
V
V
450
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
I_C = –30mA, I_B = –3mA
V_CB = –10V, I_E = 10mA, f = 200MHz
–1
V
200
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
4
pF
Noise voltage
NV
V_CE = –10V, I_C = –1mA, G_V= 80dB,
150
mV
R_g = 100kΩ, Function = FLAT
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
R
130 ~ 220
IR
S
185 ~ 330
IS
T
260 ~ 450
IT
1