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2SB1219 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
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Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1820 and 2SD1820A
I Features
⢠Large collector current IC
⢠S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to
2SB1219
VCBO
â30
V
base voltage
2SB1219A
â60
Collector to
2SB1219
VCEO
â25
V
emitter voltage 2SB1219A
â50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
â5
V
ICP
â1
A
IC
â500
mA
PC
150
mW
Tj
150
°C
Tstg
â55 to +150
°C
0.3+â00..01
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15+â00..0150
1: Base
2: Emitter
3: Collector
Marking Symbol
⢠2SB1219 : C
⢠2SB1219A : D
EIAJ: SC-70
S-Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector cutoff current
Collector to
base voltage
2SB1219
2SB1219A
ICBO
VCBO
VCB = â20 V, IE = 0
IC = â10 µA, IE = 0
â 0.1
â30
â60
Collector to
2SB1219
VCEO
IC = â2 mA, IB = 0
â25
emitter voltage
2SB1219A
â50
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
VEBO
IE = â10 µA, IC = 0
â5
hFE1 *2 VCE = â10 V, IC = â150 mA
85
340
hFE2
VCE = â10 V, IC = â500 mA
40
VCE(sat) IC = â300 mA, IB = â30 mA
â 0.35 â 0.6
VBE(sat) IC = â300 mA, IB = â30 mA
â1.1 â1.5
fT
VCB = â10 V, IE = 50 mA, f = 200 MHz
200
Cob
VCB = â10 V, IE = 0, f = 1 MHz
6
15
Note) *1: Pulse measurement
*2: Rank classification
Unit
µA
V
V
V
V
V
MHz
pF
Rank
hFE1
Marking 2SB1219
symbol 2SB1219A
Q
85 to 170
CQ
DQ
R
120 to 240
CR
DR
S
170 to 340
CS
DS
No-rank
85 to 340
C
D
Product of no-rank is not classi-
fied and have no indication for
rank.
1
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